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2024年10月30日

Production of EUV Power with SECRAL

  • The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography. However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product. Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography. ECR plasma seems to be one of the alternatives. In order to investigate the feasibility of ECR plasma as a EUV light source, the EUV power emitted by SECRAL was measured. A EUV power of 1.03W in 4$\uppi$ sr solid angle was obtained when 2000W 18GHz rf power was launched, and the corresponding CE was 0.5%. Considering that SECRAL is designed to produce very high charge state ions, this very preliminary result is inspiring. Room-temperature ECR plasma and Sn plasma are both in the planned schedule.
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  • [1] . ITRS, 2005 Edition, Lithography2. Stamm U. J. Phys., 2004, D37: 32443. Bakshi V. EUV Source Workshop Summary and EUV Source Technology Status, SEMATECH EUV Source Workshop, San Jose, CA, USA, 27 Feb., 20054. Stamm U, Kleinschmidt J, K. Gael et al. EUV Source Development at XTREME Technologies an Update, SEMAT-ECH EUV Source Workshop, San Jose, CA, USA, 27 Feb.,20055. Furukawa H, Murakami M, KANG Y G et al. Estimations on Generation of High Energy Particle from LPP EUV Light Sources, 2004 EUVL Symposium6. Jonkers J. Plasma Sources Sci. Technol., 2006, 15: 87. Akira S. J. Plasma Fusion Res., 2003, 79: 3158. Krüken T, Bergmann K, Juschkin L et al. J. Phys., 2004,D37: 32139. Bernhardi K, Wiesemann K. Plasma Phys., 1982, 24: 86710. Girard A. Rev. Sci. Instr., 1992, 63: 267611. ZHAO H Y, ZHAO H W, MA XWet al. Rev. Sci. Instrum.,2006, 77: 03A31212. Barue C, Briand P, Girard A et al. Rev. Sci. Instr., 1992,63: 284413. Grüling P, Hollandt J, Ulm G. Nucl. Instr. and Meth. Phys.Res., 1999, A437: 15214. Merabet H, Kondagari S, Bruch R et al. Nucl. Instr. And Meth. Phys. Res., 2005, B241: 2315. Hitz D. 3rd International EUVL Symposium, 01-04 Nov.2004, Miyazaki, Japan16. ZHAO H W, WEI B W, LIU Z W et al. Rev. Sci. Instrum.,2000, 71: 646
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Get Citation
ZHAO HUAN-Yu, ZHAO Hong-Wei, SUN Liang-Ting, ZHANG Xue-Zhen, SHENG Liu-Si, TIAN Yang-Chao and ZHANG Guo-Bin. Production of EUV Power with SECRAL[J]. Chinese Physics C, 2007, 31(S1): 229-231.
ZHAO HUAN-Yu, ZHAO Hong-Wei, SUN Liang-Ting, ZHANG Xue-Zhen, SHENG Liu-Si, TIAN Yang-Chao and ZHANG Guo-Bin. Production of EUV Power with SECRAL[J]. Chinese Physics C, 2007, 31(S1): 229-231. shu
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Received: 2007-05-30
Revised: 1900-01-01
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Production of EUV Power with SECRAL

    Corresponding author: ZHAO HUAN-Yu,
  • Institute of Modern Physics, Lanzhou 730000, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China3 University of Sciences and Technology of China, Hefei 230026, China

Abstract: The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography. However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product. Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography. ECR plasma seems to be one of the alternatives. In order to investigate the feasibility of ECR plasma as a EUV light source, the EUV power emitted by SECRAL was measured. A EUV power of 1.03W in 4$\uppi$ sr solid angle was obtained when 2000W 18GHz rf power was launched, and the corresponding CE was 0.5%. Considering that SECRAL is designed to produce very high charge state ions, this very preliminary result is inspiring. Room-temperature ECR plasma and Sn plasma are both in the planned schedule.

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