A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect.
| [1] | . Jean-Pierre Colinge. Silicon-on-Insulator Technology: Materials to VLSI. Boston, Massachusetts, USA: Kluwer Academic Publishers, 19972. Ferlet-Cavrois V, Musseau O, Flament O, Leray J L, Pelloie J L, Raynaud C, Faynot O. IEEE Trans. Nucl. Sci.,1998, 45: 24583. Ferlet-Cavrois V, Colladant T, Paillet P, Leray J L,Musseau O, Schwank J R, Shaneyfelt M R, Pelloie J L.IEEE Trans. Nucl. Sci., 2000, 47(6): 21834. LIU S T, Jenkins W C, Hughes H L. IEEE Trans. Nucl.Sci., 1998, 45(6): 24425. Schwank J R et al. IEEE Trans. Nucl. Sci., 2003, 50: 5226. Giraldo A et al. Solid-State Electronics, 2000, 44: 9817. LIU S T et al. IEEE Trans. Nucl. Sci., 1999, 46: 18178. Hughes H L et al. IEEE Trans. Nucl. Sci., 2003, 50: 5009. Iwayama T S et al. Microelectronics Reliability, 2000, 40:849 |
| [1] | Kai Zhou , Yun-Tao Song , Kai-Zhong Ding , Jian Ge , Kai Yao . Analytical solution of transverse oscillation in cyclotron using LP method. Chinese Physics C, 2018, 42(3): 037001. doi: 10.1088/1674-1137/42/3/037001 |
| [2] | Ibrahim Sener . Self duality solution with a Higgs field. Chinese Physics C, 2018, 42(10): 103104. doi: 10.1088/1674-1137/42/10/103104 |
| [3] | Yi Liang , Long-Bin Chen , Cong-Feng Qiao . X(16.7) as the solution of the NuTeV anomaly. Chinese Physics C, 2017, 41(6): 063105. doi: 10.1088/1674-1137/41/6/063105 |
| [4] | Yi Liu , Yunpeng Lu , Xudong Ju , Qun Ou-Yang . Test of a fine pitch SOI pixel detector with laser beam. Chinese Physics C, 2016, 40(1): 016202. doi: 10.1088/1674-1137/40/1/016202 |
| [5] | Wen-Jun Chen , Hong Ma , De Yu , Xiao-Hu Zeng . Numerical solution to the Bloch equations: paramagnetic solutions under wideband continuous radio frequency irradiation in a pulsed magnetic field. Chinese Physics C, 2016, 40(8): 088201. doi: 10.1088/1674-1137/40/8/088201 |
| [6] | YANG Yan-Ji , LU Jing-Bin , WANG Yu-Sa , CHEN Yong , XU Yu-Peng , CUI Wei-Wei , LI Wei , LI Zheng-Wei , LI Mao-Shun , LIU Xiao-Yan , WANG Juan , HAN Da-Wei , CHEN Tian-Xiang , LI Cheng-Kui , HUO Jia , HU Wei , ZHANG Yi , LU Bo , ZHU Yue , MA Ke-Yan , WU Di , LIU Yan , ZHANG Zi-Liang , YIN Guo-He , WANG Yu . Proton irradiation effect on SCDs. Chinese Physics C, 2014, 38(8): 086004. doi: 10.1088/1674-1137/38/8/086004 |
| [7] | GAO Long , YU Bo-Xiang , DING Ya-Yun , ZHOU Li , WEN Liang-Jian , XIE Yu-Guang , WANG Zhi-Gang , CAI Xiao , SUN Xi-Lei , FANG Jian , XUE Zhen , ZHANG Ai-Wu , SUN Li-Jun , GE Yong-Shuai , LIU Ying-Biao , NIU Shun-Li , HU Tao , CAO Jun , , . Attenuation length measurements of a liquid scintillator with LabVIEW and reliability evaluation of the device. Chinese Physics C, 2013, 37(7): 076001. doi: 10.1088/1674-1137/37/7/076001 |
| [8] | YE Qing , CHEN Xing , ZHOU Jing , ZHAO Hai-Feng , CHU Wang-Sheng , ZHENG Xu-Sheng , WU Zi-Yu . Local hydrated structure of an Fe2+/Fe3+ aqueous solution: an investigation using a combination of molecular dynamics and X-ray absorption fine structure methods. Chinese Physics C, 2013, 37(3): 038003. doi: 10.1088/1674-1137/37/3/038003 |
| [9] | ZHOU Zhi-Yong , WANG Qi-Chao , GAO Qing . Investigation of the rescattering effect in D decay. Chinese Physics C, 2011, 35(8): 708-712. doi: 10.1088/1674-1137/35/8/002 |
| [10] | M. Benayoun , L. Del Buono , B. P. David , O. Leitner . Can VMD improve the estimate of the muon g－2?. Chinese Physics C, 2010, 34(6): 698-704. doi: 10.1088/1674-1137/34/6/015 |
| [11] | SHENG Li-Na , SONG Ming-Tao , ZHANG Xiao-Qi , YANG Xiao-Tian , GAO Da-Qing , HE Yuan , ZHANG Bin , LIU Jie , SUN You-Mei , DANG Bing-Rong , LI Wen-Jian , SU Hong , MAN Kai-Di , GUO Yi-Zhen , WANG Zhi-Guang , ZHAN Wen-Long . Design of the IMP microbeam irradiation system for 100 MeV/u heavy ions. Chinese Physics C, 2009, 33(4): 315-320. doi: 10.1088/1674-1137/33/4/016 |
| [12] | D. Werthmüller (for the Crystal Ball/TAPS collaborations) . Investigation of the anomaly in η-photoproduction off the neutron. Chinese Physics C, 2009, 33(12): 1345-1348. doi: 10.1088/1674-1137/33/12/051 |
| [13] | BI Da-Wei , ZHANG Zheng-Xuan , ZHANG Shuai , CHEN Ming , YU Wen-Jie , WANG Ru , TIAN Hao , LIU Zhang-Li . Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers. Chinese Physics C, 2009, 33(10): 866-869. doi: 10.1088/1674-1137/33/10/009 |
| [14] | QIAN Cong , ZHANG Zheng-Xuan , ZHANG Feng , LIN Cheng-Lu . Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide. Chinese Physics C, 2008, 32(2): 130-134. doi: 10.1088/1674-1137/32/2/011 |
| [15] | TIAN Hao , ZHANG Zheng-Xuan , HE Wei , YU Wen-Jie , WANG Ru , CHEN Ming . Total dose radiation effects on SOI NMOS transistors with different layouts. Chinese Physics C, 2008, 32(8): 645-648. doi: 10.1088/1674-1137/32/8/011 |
| [16] | LIU Chun-Bao , WANG Zhi-Guang , ZANG Hang , WEI Kong-Fang , YAO Cun-Feng , SHENG Yan-Bin , MA Yi-Zhun , A Benyagoub , M Toulemonde , JIN Yun-Fan . Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation. Chinese Physics C, 2008, 32(S2): 251-254. |
| [17] | YU Wen-Jie , WANG Ru , ZHANG Zheng-Xuan , QIAN Cong , HE Wei , TIAN Hao , CHEN Ming . Bias Dependence of Total Dose Effect of Partially Depleted SOI MOSFET. Chinese Physics C, 2007, 31(9): 819-822. |
| [18] | Liu Changlong , Hou Mingdong , Wang Zhiguang , Cheng Song , Sun Youmei , Zhu Zhiyong , Jin Yunfan , Li Changlin , Wang Yinshu , Meng Qinghua . Dimensional Changes of Amorphous Alloys Under Swift Ar Ion Irradiation. Chinese Physics C, 1997, 21(S4): 93-98. |
| [19] | Zhang Tianbao , Yang Guangming , Guo Baonian , Wang Haidong . Experimental Investigation of the Decay Rate of Orthopositronium. Chinese Physics C, 1992, 16(S2): 135-140. |
| [20] | Xu Jianjun , Li Xinzhou , Ni Guangjiong . An Inflation Solution from the Calabi-Yau Compactification. Chinese Physics C, 1988, 12(S4): 393-398. |
Abstract:
A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect.
CPC Website
IOP Website
CPC WeChat
Copyright © Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Beijing 100049, China 京ICP备05002789号-1
Supported by: Beijing Renhe Information Technology Co. Ltd E-mail: [email protected]
Abstract
HTML
Reference
Related
PDF
DownLoad: